document number: 94394 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-apr-10 1 phase control thyristors (stud version), 1650 a st1200c..kp series vishay high power products features ? center amplifying gate ? metal case with ceramic insulator ? international standa rd case a-24 (k-puk) ? high profile hockey puk ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 1650 a a-24 (k-puk) major ratings and characteristics parameter test conditions values units i t(av) 1650 a t hs 55 c i t(rms) 3080 a t hs 25 c i tsm 50 hz 30 500 a 60 hz 32 000 i 2 t 50 hz 4651 ka 2 s 60 hz 4250 v drm /v rrm 1200 to 2000 v t q typical 200 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st1200c..k 12 1200 1300 100 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94394 2 revision: 23-apr-10 st1200c..kp series vishay high power products phase control thyristors (stud version), 1650 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (sin gle side) cooled 1650 (700) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink temp erature double side cooled 3080 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 30 500 t = 8.3 ms 32 000 t = 10 ms 100 % v rrm reapplied 25 700 t = 8.3 ms 26 900 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 4651 ka 2 s t = 8.3 ms 4250 t = 10 ms 100 % v rrm reapplied 3300 t = 8.3 ms 3000 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 46 510 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.91 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.01 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.21 m high level value of on-state slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.19 maximum on-state voltage v tm i pk = 4000 a, t j = t j maximum, t p = 10 ms sine pulse 1.73 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.9 s typical turn-off time t q i tm = 550 a, t j = t j maximum, di/dt = 40 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 100 ma
document number: 94394 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-apr-10 3 st1200c..kp series phase control thyristors (stud version), 1650 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 16 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 3 maximum peak positi ve gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = - 40 c 1.4 - v t j = 25 c 1.1 3.0 t j = 125 c 0.9 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.0.42 k/w dc operation double side cooled 0.021 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.006 dc operation double side cooled 0.003 mounting force, 10 % 24 500 (2500) n (kg) approximate weight 425 g case style see dimensions - link at the end of datasheet a-24 (k-puk) r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.003 0.003 0.002 0.002 t j = t j maximum k/w 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94394 4 revision: 23-apr-10 st1200c..kp series vishay high power products phase control thyristors (stud version), 1650 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state po wer loss characteristics fig. 6 - on-state po wer loss characteristics average on-state current (a) maximum allowable heatsink temperature (c) 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 30 60 90 120 180 conduction angle st1200c..k series (single side cooled) r (dc) = 0.042 k/w thj-hs maximum allowable heatsink temperature (c) average on-state current (a) 20 30 40 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 dc 30 60 90 120 180 conduction period st1200c..k series (single side cooled) r (dc) = 0.042 k/w thj-hs average on-state current (a) maximum allowable heatsink temperature (c) 30 40 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 30 60 90 120 180 conduction angle st1200c..k series (double side cooled) r (dc) = 0.021 k/w thj-hs average on-state current (a) maximum allowable heatsink temperature (c) 20 30 40 50 60 70 80 90 100 110 120 130 0 600 1200 1800 2400 3000 3600 dc 30 60 90 120 180 conduction period st1200c..k series (double side cooled) r (dc) = 0.021 k/w thj-hs average on-state current (a) maximum allowable heatsink temperature (c) 0 500 1000 1500 2000 2500 3000 3500 4000 0 400 800 1200 1600 2000 180 120 90 60 30 rms limit conduction angle st1200c..k series t = 125c j maximum allowable heatsink temperature (c) average on-state current (a) 0 1000 2000 3000 4000 5000 0 600 1200 1800 2400 3000 3600 dc 180 120 90 60 30 rms limit conduction period st1200c..k series t = 125c j
document number: 94394 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 23-apr-10 5 st1200c..kp series phase control thyristors (stud version), 1650 a vishay high power products fig. 7 - maximum non- repetitive surge current single and double side cooled fig. 8 - maximum non-re petitive surge current single and double side cooled fig. 9 - on-state volt age drop characteristics fig. 10 - ther mal impedance z thj-hs characteristics number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 12000 14000 16000 18000 20000 22000 24000 26000 28000 11010 0 initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm st1200c..k series pulse train duration (s) peak half sine wave on-state current (a) 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 32000 0.01 0.1 1 versus pulse train duration. control maximum non repetitive surge current initial t = 125c no voltage reapplied rated v reapplied j rrm of conduction may not be maintained. st1200c..k series instantaneous on-state voltage (v) instantaneous on-state current (a) 100 1000 10000 0.5 1 1.5 2 2.5 3 t = 25c j t = 125c j st1200c..k series square wave pulse duration (s) transient thermal impedance z (k/w) thj-hs 0.001 0.01 0.1 0.001 0.01 0.1 1 10 steady state value r = 0.042 k/w (single side cooled) r = 0.021 k/w (double side cooled) (dc operation) thj-hs thj-hs st1200c..k series
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94394 6 revision: 23-apr-10 st1200c..kp series vishay high power products phase control thyristors (stud version), 1650 a fig. 11 - gate characteristics ordering information table instantaneous gate current (a) instantaneous gate voltage (v) 0.1 1 10 100 0.001 0.01 0.1 1 10 10 0 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (2) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s rectangular gate pulse (3) (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms device: st1200c..k series 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 8 - critical dv/dt: 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - k = puk case a-24 (k-puk) 9 - p = lead (pb)-free 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) none = 500 v/s (standard selection) l = 1000 v/s (special selection) device code 5 1 3 24 6789 st 120 0 c 20 k 1 - p links to related documents dimensions www.vishay.com/doc?95081
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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